Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)KOUKITU, Akinori; KUMAGAI, Yoshinao.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 32, pp 6907-6934, issn 0953-8984Article

Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experimentsFUJII, Tetsuo; YOSHII, Naoki; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 108-112, issn 0022-0248, 5 p.Article

Thermodynamics on halide vapor-phase epitaxy of InN using incl and InCl₃KUMAGAI, Yoshinao; TAKEMOTO, Kikurou; KOUKITU, Akinori et al.Journal of crystal growth. 2001, Vol 222, Num 1-2, pp 118-124, issn 0022-0248Article

The 7th International Workshop on Bulk Nitride Semiconductors (IWBNS VII)FREITAS, Jaime; SITAR, Zlatko; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2012, Vol 350, Num 1, issn 0022-0248, 100 p.Conference Proceedings

Influence of substrate polarity of (0 0 0 1 ) and (0 0 0 1 )GaN surfaces on hydride vapor-phase epitaxy of InNTOGASHI, Rie; MURAKAMI, Hisashi; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2010, Vol 312, Num 5, pp 651-655, issn 0022-0248, 5 p.Article

Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrateMURAKAMI, Hisashi; KANGAWA, Yoshihiro; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2004, Vol 268, Num 1-2, pp 1-7, issn 0022-0248, 7 p.Article

Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs (111)A and (111)B surfacesMURAKAMI, Hisashi; KUMAGAI, Yoshinao; SEKI, Hisashi et al.Journal of crystal growth. 2003, Vol 247, Num 3-4, pp 245-250, issn 0022-0248, 6 p.Article

Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloyKOUKITU, Akinori; KUMAGAI, Yoshinao; SEKI, Hisashi et al.Journal of crystal growth. 2000, Vol 221, pp 743-750, issn 0022-0248Conference Paper

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and In_xGa_1-xN using GaCl₃ and InCl₃KUMAGAI, Yoshinao; TAKEMOTO, Kikurou; HASEGAWA, Takahiro et al.Journal of crystal growth. 2001, Vol 231, Num 1-2, pp 57-67, issn 0022-0248Article

Ab initio calculation for the decomposition process of GaN (0001) and (0 0 0 1) surfacesSUZUKI, Hikari; TOGASHI, Rie; MURAKAMI, Hisashi et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1632-1636, issn 0022-0248, 5 p.Article

Step-flow growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using ZnCl₂ and H₂0 source gasesMASUDA, Rui; FUJII, Tetsuo; YOSHII, Naoki et al.Journal of crystal growth. 2010, Vol 312, Num 16-17, pp 2324-2327, issn 0022-0248, 4 p.Article

Hydride vapor phase epitaxy of GaN on GaAs substrateKOUKITU, Akinori; KUMAGAI, Yoshinao; SEKI, Hisashi et al.Vacuum science and technology : nitrides as seen by the technology 2002. 2002, pp 105-124, isbn 81-7736-198-8, 20 p.Book Chapter

Growth of thick Al_xGa_1-xN ternary alloy by hydride vapor-phase epitaxyYAMANE, Takayoshi; SATOH, Fumitaka; MURAKAMI, Hisashi et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 164-167, issn 0022-0248, 4 p.Conference Paper

Thermodynamic analysis of AlGaN HVPE growthKOUKITU, Akinori; KIKUCHI, Jun; KANGAWA, Yoshihiro et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 47-54, issn 0022-0248, 8 p.Conference Paper

Hydride vapor phase epitaxy of InN by the formation of InCl₃using In metal and Cl₂KUMAGAI, Yoshinao; KIKUCHI, Jun; NISHIZAWA, Yuuki et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 57-61, issn 0022-0248, 5 p.Conference Paper

Effective distribution coefficients of an ideal solid solution crystal : Monte Carlo simulationMATSUMOTO, Kiiko; IRISAWA, Toshiharu; KITAMURA, Masao et al.Journal of crystal growth. 2005, Vol 276, Num 3-4, pp 635-642, issn 0022-0248, 8 p.Article

Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPEKANGAWA, Yoshihiro; KAWAGUCHI, Norihito; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 444-448, issn 0022-0248, 5 p.Conference Paper

Pulse laser assisted MOVPE for InGaN with high indium contentKAWAGUCHI, Norihito; HIDA, Ken-Nosuke; KANGAWA, Yoshihiro et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 12, pp 2846-2849, issn 0031-8965, 4 p.Conference Paper

Free exciton absorption in Ga_1―xZn_xN_1―xO_x alloysMAOFENG DOU; BALDISSERA, Gustavo; PERSSON, Clas et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 17-20, issn 0022-0248, 4 p.Conference Paper

Growth of thick AlN layers by hydride vapor-phase epitaxyKUMAGAI, Yoshinao; YAMANE, Takayoshi; KOUKITU, Akinori et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 62-67, issn 0022-0248, 6 p.Conference Paper

Vinyltitanium as an initiator for the polymerization of acetyleneTAKAGI, Yasuhiro; SAEKI, Naoko; TSUBOUCHI, Akira et al.Journal of polymer science. Part A. Polymer chemistry. 2002, Vol 40, Num 15, pp 2663-2669, issn 0887-624XArticle

Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H₂ and N₂KUMAGAI, Yoshinao; IGI, Takahiro; ISHIZUKI, Masanari et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 60-65, issn 0022-0248, 6 p.Conference Paper

Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substratesNAGASHIMA, Toru; HAKOMORI, Akira; YANAGI, Hiroyuki et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 75-79, issn 0022-0248, 5 p.Conference Paper

Development of GaN wafers for solid-state lighting via the ammonothermal methodLETTS, Edward; HASHIMOTO, Tadao; IKARI, Masanori et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 66-68, issn 0022-0248, 3 p.Conference Paper

Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressureMURAKAMI, Hisashi; CHO, Hyun-Chol; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4954-4958, issn 0022-0248, 5 p.Conference Paper